2024/5/8 17:00:30
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· State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation
· Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
· ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
· Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
· High-Drive Outputs (–32-mA IOH, 64-mA IOL)
·Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Plastic (N) and Ceramic (J) DIPs, and Ceramic Flat (W) Package
Description
These octal buffers and line drivers are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. Together with the SN54ABT240, SN74ABT240A, and ’ABT244A, these devices provide the choice of selected combinations of inverting and noninverting outputs, symmetrical active-low output-enable (OE) inputs, and complementary OE and OE inputs.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
The SN54ABT241 is characterized for operation over the full military temperature range of –55°C to 125°C. The SN74ABT241A is characterized for operation from –40°C to 85°C.
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20万现货SKU
品类不断扩充
科技智能大仓储
4小时快速交货
仅从原厂和代理商进货
每一颗料均可原厂追溯
明码标价节省时间成本
一站式采购正品元器件
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