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PTH12050YAH,6A12V输入非隔离式DDR-QDR存储器总线终端模块

2023/9/19 15:09:11

285

PTH12050YAH

6A 12V 输入非隔离式 DDR/QDR 存储器总线终端模块



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FEATURES

 

? VTT Bus Termination Output(Output Tracks the System VREF)

? 6 A Output Current (8 A Peak)

? 3.3-V, 5-V or 12-V Input Voltage

? DDR and QDR Compatible

? On/Off Inhibit (for VTT Standby)

? Undervoltage Lockout

? Operating Temperature: –40°C to 85°C

? Efficiencies up to 88%

? Output Overcurrent Protection (Non-Latching,Auto-Reset)

? 50 W/in3 Power Density

? Safety Agency Approvals:UL/cUL60950, EN60950, VDE

? Point-of-Load Alliance (POLA?) Compatible


                                       

 

DESCRIPTION

 

The PTHxx050Y are a series of ready-to-use switching regulator modules from Texas Instruments designed specifically for bus termination in DDR and QDR memory applications. Operating from either a 3.3-V, 5-V or 12-V input, the modules generate a VTT output that will source or sink up to 6 A of current (8 A transient) to accurately track their VREF input. VTT is the required bus termination supply voltage, and VREF is the reference voltage for the memory and chipset bus receiver comparators. VREF is usually set to half the VDDQ power supply voltage.

 

Both the PTHxx050Y series employs an actively switched synchronous rectifier output to provide state-of-the-art stepdown switching conversion. The products are small in size (0.87 in × 0.5 in), and are an ideal choice where space, performance, and high efficiency are desired, along with the convenience of a ready-to-use module.

 

Operating features include an on/off inhibit and output over-current protection (source mode only). The on/off inhibit feature allows the VTT bus to be turned off to save power in a standby mode of operation.

 

Package options include both throughhole and surface mount configurations.