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LM5100CMAX/NOPB

商品型号： LM5100CMAX/NOPB

制造厂商： TI(德州仪器)

封装规格： SOIC (D)8

商品毛重： 1.00g

商品编号： CY665325

数据手册：在线预览

商品描述： LM5100CMAX/NOPB 21 SOIC (D)8

交货地:国内货期(工作日):立即发货

库存:现货5000(2500起订)

数量: X ￥20

总价: ￥20.00

包装:「盒 / 2500」

近期成交:1单

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数量

价格
1+

￥20
100+

￥18
1000+

￥16
2500+

￥12

规格参数
PDF数据手册

属性（属性参数值如有纰漏请以PDF为准）	参数值
商品目录	全桥/半桥驱动

LM5100CMAX/NOPB

LM5100C 的特性

Drives Both a High-Side and Low-Side N-Channel
MOSFETs
Independent High- and Low-Driver Logic Inputs
Bootstrap Supply Voltage up to 118 V DC
Fast Propagation Times (25-ns Typical)
Drives 1000-pF Load With 8-ns Rise and Fall
Times
Excellent Propagation Delay Matching (3-ns
Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption
Pin Compatible With HIP2100/HIP2101

LM5100C 的说明

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.