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UC1611L883B,温度范围为-55°C至125°C的四肖特基二极管阵列

2023/10/16 18:06:02

690

UC1611L883B

温度范围为 -55°C 至 125°C 的四肖特基二极管阵列



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FEATURES 

 

· Matched, Four-Diode Monolithic Array 

· High Peak Current 

· Low-Cost MINIDIP Package 

· Low-Forward Voltage 

· Parallelable for Lower VF or Higher IF 

· Fast Recovery Time 

· Military Temperature Range Available

 

 

 

DESCRIPTION

 

This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.This single monolithic chip is fabricated in both hermetic CERDIP and copper-eaded plastic packages. The UC1611 in ceramic is designed for –55°C to 125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to 70°C ambient temperature range.