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TPD4S010DQAR,适用于USB3.0且具有5A8-20us浪涌额定值的四路保护二极管

2023/12/8 16:00:20

201

TPD4S010DQAR

适用于 USB 3.0 且具有 5A 8/20us 浪涌额定值的四路 0.8pF、5.5V、±8kV ESD 保护二极管





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1 Features

 

 

• IEC 61000-4-2 Level 4 ESD Protection

– ±8-kV Contact Discharge

• IEC 61000-4-5 Surge Protection

– 2.5A (8/20µs)

• I/O Capacitance: 0.8 pF (Typical)

• Low Leakage Current: 10 nA (Typical)

• Supports High-Speed Differential Data Rates(3-dB Bandwidth > 4 GHz)

• Ultra-low Matching Capacitance Between Differential Signal Pairs

• Ioff Feature for the TPD4S009

• Industrial Temperature Range:

–40°C to 85°C

• Easy Straight through Routing, Space-Saving Package Options

 

 

 

2 Applications

 

• End Equipment

– Set-Top Boxes

– DTVs

– Laptop/Desktop

– Electronic Point of Sale (EPOS)

• Interfaces

– USB 2.0

– HDMI 1.4

– LVDS

– SATA

– Ethernet

– FireWire

 

   


 

 

3 Description

 

The TPD4S009 and TPD4S010 are four-channel TVS diode arrays for electrostatic discharge (ESD) protection. TPD4S009 and TPD4S010 are rated to dissipate contact ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4), with ±8-kV contact discharge ESD protection. The low capacitance (0.8-pF) of these devices, coupled with the excellent matching between differential signal pairs (0.05-pF line-line capacitance for the TPD4S009DRY) enables this device to provide transient voltage suppression circuit protection for high-speed differential data rates (3-dBbandwidth > 4 GHz).

 

The TPD4S009 is offered in DBV, DCK, DGS, and DRY packages. The TPD4S009DRYR is the most space saving package option available for dual pair high-speed differential lines. The TPD4S010 is offered in the industry standard DQA package. The TPD4S009DGSR and TPD4S010DQAR offer flow-through board layout options to reduce signal glitches normally caused by routing mismatches between the D and D- signal pair. See also TPD4E05U06DQAR which is P2P compatible with TPD4S010DQAR. This device offers higher IEC ESD protection, lower capacitance, lower RDYN, lower DC breakdown voltage, and lower clamping voltage.